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Trap-dominated minority-carrier recombination in GaInNAspn junctions

Identifieur interne : 00C140 ( Main/Repository ); précédent : 00C139; suivant : 00C141

Trap-dominated minority-carrier recombination in GaInNAspn junctions

Auteurs : RBID : Pascal:03-0317815

Descripteurs français

Pascal (Inist)
- 7340K, 7350G, 7325, 7320A, 7350P, Etude expérimentale, Gallium composé, Indium composé, Gallium arséniure, Semiconducteur III-V, Jonction p n, Porteur minoritaire, Etat défaut, Conductivité obscurité, Recombinaison superficielle, Bande interdite, Etat interface, Bande valence, Bande conduction, Durée vie porteur charge.

English descriptors

KwdEn :
- Carrier lifetime, Conduction bands, Dark conductivity, Defect states, Energy gap, Experimental study, Gallium arsenides, Gallium compounds, III-V semiconductors, Indium compounds, Interface states, Minority carriers, Surface recombination, Valence bands, p n junctions.

Abstract

We use dark current-voltage measurements on GaInNAspn junctions as a direct probe of the dominant recombination mechanism in this material. The dark current is dominated by recombination through traps. Using the classic theory of Sah, Noyce, and Shockley, we deduce trap energies and carrier capture lifetimes as a function of band gap E_g. The trap energy is found to be roughly constant at ∼0.4 eV below the conduction band or above the valence band as E_g decreases from ∼1.1 to 0.9 eV with increasing [N]. Concomitantly, the capture lifetimes decrease from 5 to 0.08 ns. This rapid decrease has important implications for performance of high-[N] minority-carrier devices. © 2003 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Friedman, D J" uniqKey="Friedman D">D. J. Friedman</name>
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<author><name sortKey="Geisz, J F" uniqKey="Geisz J">J. F. Geisz</name>
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<author><name sortKey="Metzger, W K" uniqKey="Metzger W">W. K. Metzger</name>
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<author><name sortKey="Johnston, S W" uniqKey="Johnston S">S. W. Johnston</name>
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<front><div type="abstract" xml:lang="en">We use dark current-voltage measurements on GaInNAspn junctions as a direct probe of the dominant recombination mechanism in this material. The dark current is dominated by recombination through traps. Using the classic theory of Sah, Noyce, and Shockley, we deduce trap energies and carrier capture lifetimes as a function of band gap E<sub>g</sub>
. The trap energy is found to be roughly constant at ∼0.4 eV below the conduction band or above the valence band as E<sub>g</sub>
 decreases from ∼1.1 to 0.9 eV with increasing [N]. Concomitantly, the capture lifetimes decrease from 5 to 0.08 ns. This rapid decrease has important implications for performance of high-[N] minority-carrier devices. © 2003 American Institute of Physics.</div>
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. The trap energy is found to be roughly constant at ∼0.4 eV below the conduction band or above the valence band as E<sub>g</sub>
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Trap-dominated minority-carrier recombination in GaInNAspn junctions

Trap-dominated minority-carrier recombination in GaInNAspn junctions

Descripteurs français

English descriptors

Abstract

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